Changes in the dominant recombination mechanisms of polycrystalline Cu(In,Ga)Se2 occurring during growth
Identifieur interne : 00BE59 ( Main/Repository ); précédent : 00BE58; suivant : 00BE60Changes in the dominant recombination mechanisms of polycrystalline Cu(In,Ga)Se2 occurring during growth
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Abstract
The changes in dominant recombination mechanisms of Cu(In,Ga)Se2 thin films grown from (In,Ga)2Se3 precursors are investigated using energy- and time-resolved photoluminescence. The results are analyzed with a rate-equation analysis and correlated with n/p diode measurements on processed devices. The experimental results quantify a change in the dominant radiative process and an improvement in the underlying material quality. These observations support a growth model incorporating changes in the dominant defect states and recombination mechanisms during this final stage of the growth process. Additionally, evidence is presented that supports the passivation of near-surface recombination sites by CdS. © 2003 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Changes in the dominant recombination mechanisms of polycrystalline Cu(In,Ga)Se<sub>2</sub> occurring during growth</title><author><name sortKey="Keyes, B M" uniqKey="Keyes B">B. M. Keyes</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>National Renewable Energy Laboratory, Golden, Colorado 80401</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>National Renewable Energy Laboratory, Golden</wicri:cityArea></affiliation></author><author><name sortKey="Dippo, P" uniqKey="Dippo P">P. Dippo</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>National Renewable Energy Laboratory, Golden, Colorado 80401</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>National Renewable Energy Laboratory, Golden</wicri:cityArea></affiliation></author><author><name sortKey="Metzger, W K" uniqKey="Metzger W">W. K. Metzger</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>National Renewable Energy Laboratory, Golden, Colorado 80401</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>National Renewable Energy Laboratory, Golden</wicri:cityArea></affiliation></author><author><name sortKey="Abushama, J" uniqKey="Abushama J">J. Abushama</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>National Renewable Energy Laboratory, Golden, Colorado 80401</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>National Renewable Energy Laboratory, Golden</wicri:cityArea></affiliation></author><author><name sortKey="Noufi, R" uniqKey="Noufi R">R. Noufi</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>National Renewable Energy Laboratory, Golden, Colorado 80401</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>National Renewable Energy Laboratory, Golden</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0453120</idno><date when="2003-11-01">2003-11-01</date><idno type="stanalyst">PASCAL 03-0453120 AIP</idno><idno type="RBID">Pascal:03-0453120</idno><idno type="wicri:Area/Main/Corpus">00C779</idno><idno type="wicri:Area/Main/Repository">00BE59</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Copper compounds</term><term>Defect states</term><term>Electron-hole recombination</term><term>Experimental study</term><term>Gallium compounds</term><term>Indium compounds</term><term>Passivation</term><term>Photoluminescence</term><term>Semiconductor thin films</term><term>Ternary semiconductors</term><term>Time resolved spectra</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7361L</term><term>7866L</term><term>7855H</term><term>7350G</term><term>Etude expérimentale</term><term>Cuivre composé</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur ternaire</term><term>Couche mince semiconductrice</term><term>Recombinaison électron trou</term><term>Photoluminescence</term><term>Spectre résolution temporelle</term><term>Etat défaut</term><term>Passivation</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The changes in dominant recombination mechanisms of Cu(In,Ga)Se<sub>2</sub> thin films grown from (In,Ga)<sub>2</sub>Se<sub>3</sub> precursors are investigated using energy- and time-resolved photoluminescence. The results are analyzed with a rate-equation analysis and correlated with n/p diode measurements on processed devices. The experimental results quantify a change in the dominant radiative process and an improvement in the underlying material quality. These observations support a growth model incorporating changes in the dominant defect states and recombination mechanisms during this final stage of the growth process. Additionally, evidence is presented that supports the passivation of near-surface recombination sites by CdS. © 2003 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>94</s2></fA05><fA06><s2>9</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Changes in the dominant recombination mechanisms of polycrystalline Cu(In,Ga)Se<sub>2</sub> occurring during growth</s1></fA08><fA11 i1="01" i2="1"><s1>KEYES (B. 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All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0453120</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The changes in dominant recombination mechanisms of Cu(In,Ga)Se<sub>2</sub> thin films grown from (In,Ga)<sub>2</sub>Se<sub>3</sub> precursors are investigated using energy- and time-resolved photoluminescence. The results are analyzed with a rate-equation analysis and correlated with n/p diode measurements on processed devices. The experimental results quantify a change in the dominant radiative process and an improvement in the underlying material quality. These observations support a growth model incorporating changes in the dominant defect states and recombination mechanisms during this final stage of the growth process. 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